Справочник по IGBT транзисторам. Datasheet на транзистор TSG15N120CN


ТранзисторTSG15N120CN
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A30.000
Ic max, A45.0
P, W184.000
t min,C-55
t max,C150
Rth,C0.68
Vce sat. V1.90
Cies,pF2650.0
Coes,pF150.0
Cres,pF96.0
t on, nS34.00
t rise, nS106.00
t off, nS192.00
t fall, nS94.00
Eon,mJ2.100
Eoff,mJ0.540
Etot,mJ2.640
Qg, nC110.0
Qgc,nC40.0
Qge,nC15.0
t rr,nS200.0
Qrr, nC2230.00
Возможные корпусаTO-3PN
Производитель
  • Taiwan semiconductor (http://www.ts.com.tw)
TSG15N120CN Datasheet Taiwan semiconductor