Справочник по IGBT транзисторам. Datasheet на транзистор VS-EMG050J60N


ТранзисторVS-EMG050J60N
ТипDual
Vce, V600.0
Vge,V20.0
Ic, A88.000
Ic max, A150.0
P, W338.000
t min,C-40
t max,C150
Rth,C0.37
Vce sat. V1.80
Cies,pF9500.0
Coes,pF780.0
Cres,pF116.0
t on, nS196.00
t rise, nS29.00
t off, nS220.00
t fall, nS67.00
Eon,mJ0.155
Eoff,mJ0.471
Etot,mJ0.626
Qg, nC480.0
Qgc,nC160.0
Qge,nC82.0
t rr,nS65.0
Qrr, nC350.00
Возможные корпусаEMIPAK2
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
VS-EMG050J60N Datasheet Vishay (Siliconix,General Semiconductor)