| Транзистор | BST52 |
| Тип | NPN |
| Vcb, V | 90 |
| Vce, V | 80.0 |
| Veb, V | 5.0 |
| Ic, A | 1.000 |
| Ic max, A | 2.000 |
| P, W | 1.300 |
| t min, °C | -65 |
| t max, °C | 150 |
| Rth, °C/W | 96.000 |
| Vce sat. V | 1.30 |
| hfe min | 1000 |
| hfe max | |
| f, Hz | 200000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | 400.0 |
| t off, ns | 1500.0 |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | SOT-89 | | Производитель | - Diodes inc. (http://www.diodes.com)
- NXP (Philips) (http://www.nxp.com)
- TY Semiconductor (http://www.twtysemi.com)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- CJ-Elec (http://www.cj-elec.com)
- Kexin (http://kexin.com.cn)
- HT GMR Semiconductor (www.htsemi.com)
| | |
