| Транзистор | MMDT5401 |
| Тип | PNP |
| Vcb, V | 160 |
| Vce, V | 150.0 |
| Veb, V | 5.0 |
| Ic, A | 0.200 |
| Ic max, A | |
| P, W | 0.200 |
| t min, °C | |
| t max, °C | |
| Rth, °C/W | |
| Vce sat. V | 0.50 |
| hfe min | 60 |
| hfe max | 240 |
| f, Hz | 100000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | SOT-363,SOT-26 | | Производитель | - MCC (http://www.mccsemi.com)
- Diodes inc. (http://www.diodes.com)
- Unisonic technologies (http://www.unisonic.com.tw)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- SECOS (http://www.SeCoSGmbH.com/ )
- TGS Tiger electronic (http://www.tgselec.com/)
- LGE (http://www.luguang.cn/web_en/)
| | |
