| Транзистор | UMZ1N |
| Тип | Complementary |
| Vcb, V | 60 |
| Vce, V | 50.0 |
| Veb, V | 7.0 |
| Ic, A | 0.150 |
| Ic max, A | |
| P, W | 0.150 |
| t min, °C | -55 |
| t max, °C | 150 |
| Rth, °C/W | |
| Vce sat. V | 0.50 |
| hfe min | 120 |
| hfe max | 560 |
| f, Hz | 140000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | 4.0 |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | SOT-363 | | Производитель | - MCC (http://www.mccsemi.com)
- ON (http://www.onsemi.com)
- WinnerJoin (http://www.wej.cn)
- ROHM (http://www.rohm.com)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- SECOS (http://www.SeCoSGmbH.com/ )
- TGS Tiger electronic (http://www.tgselec.com/)
- WEJ Electronics Co. (http://www.wej.cn)
- FirstSilicon (http://www.firstsilicon.co.kr)
| | |
