| Транзистор | MMBT5551 |
| Тип | NPN |
| Vcb, V | 180 |
| Vce, V | 160.0 |
| Veb, V | 6.0 |
| Ic, A | 0.600 |
| Ic max, A | |
| P, W | 0.300 |
| t min, °C | |
| t max, °C | |
| Rth, °C/W | |
| Vce sat. V | 0.50 |
| hfe min | 50 |
| hfe max | 400 |
| f, Hz | 80000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | SOT-23 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- MCC (http://www.mccsemi.com)
- Diodes inc. (http://www.diodes.com)
- Unisonic technologies (http://www.unisonic.com.tw)
- TY Semiconductor (http://www.twtysemi.com)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- HT GMR Semiconductor (www.htsemi.com)
- SECOS (http://www.SeCoSGmbH.com/ )
- Shenzhen Tuofeng Semiconductor (http://www.sztuofeng.com/)
- LGE (http://www.luguang.cn/web_en/)
- GSME (http://www.gsme.com.cn)
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
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