| Транзистор | MMBTA64 |
| Тип | PNP |
| Vcb, V | 30 |
| Vce, V | 30.0 |
| Veb, V | 10.0 |
| Ic, A | 0.800 |
| Ic max, A | |
| P, W | 0.300 |
| t min, °C | -55 |
| t max, °C | 150 |
| Rth, °C/W | 416.000 |
| Vce sat. V | 1.50 |
| hfe min | 10000 |
| hfe max | |
| f, Hz | 125000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | SOT-23 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- MCC (http://www.mccsemi.com)
- Diodes inc. (http://www.diodes.com)
- KEC (http://www.kec.co.kr)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- CJ-Elec (http://www.cj-elec.com)
- HT GMR Semiconductor (www.htsemi.com)
- WEITRON (http://weitron.com.tw)
- FirstSilicon (http://www.firstsilicon.co.kr)
| | |
