| Транзистор | BC857S |
| Тип | PNP*2 |
| Vcb, V | 50 |
| Vce, V | 45.0 |
| Veb, V | 5.0 |
| Ic, A | 0.100 |
| Ic max, A | 0.200 |
| P, W | 0.250 |
| t min, °C | -65 |
| t max, °C | 150 |
| Rth, °C/W | 140.000 |
| Vce sat. V | 0.65 |
| hfe min | 200 |
| hfe max | 630 |
| f, Hz | 200000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | 1.5 |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | SOT-363 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- Infineon (Siemens) (http://infineon.com)
- MCC (http://www.mccsemi.com)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- SECOS (http://www.SeCoSGmbH.com/ )
- TGS Tiger electronic (http://www.tgselec.com/)
- HT GMR Semiconductor (www.htsemi.com)
- Kexin (http://kexin.com.cn)
- FirstSilicon (http://www.firstsilicon.co.kr)
| | |
