| Транзистор | BC636 |
| Тип | PNP |
| Vcb, V | 45 |
| Vce, V | 45.0 |
| Veb, V | 5.0 |
| Ic, A | 1.000 |
| Ic max, A | 1.500 |
| P, W | 1.000 |
| t min, °C | -65 |
| t max, °C | 150 |
| Rth, °C/W | 150.000 |
| Vce sat. V | 0.50 |
| hfe min | 63 |
| hfe max | 250 |
| f, Hz | 100000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | TO-92 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- SECOS (http://www.SeCoSGmbH.com/ )
- Surge Components (http://www.surgecomponents.com)
- CJ-Elec (http://www.cj-elec.com)
- LGE (http://www.luguang.cn/web_en/)
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
| | |
