| Транзистор | MJD112 |
| Тип | NPN |
| Vcb, V | 100 |
| Vce, V | 100.0 |
| Veb, V | 5.0 |
| Ic, A | 2.000 |
| Ic max, A | 4.000 |
| P, W | 20.000 |
| t min, °C | -65 |
| t max, °C | 150 |
| Rth, °C/W | 6.250 |
| Vce sat. V | 3.00 |
| hfe min | 200 |
| hfe max | 12000 |
| f, Hz | 25000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | 100.0 |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | TO-252,TO-251 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- MCC (http://www.mccsemi.com)
- STMicroelectronics (http://www.st.com)
- ON (http://www.onsemi.com)
- KEC (http://www.kec.co.kr)
- TGS Tiger electronic (http://www.tgselec.com/)
- WEJ Electronics Co. (http://www.wej.cn)
- LGE (http://www.luguang.cn/web_en/)
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
| | |
