| Транзистор | MJD350 |
| Тип | PNP |
| Vcb, V | 300 |
| Vce, V | 300.0 |
| Veb, V | 3.0 |
| Ic, A | 0.500 |
| Ic max, A | 0.750 |
| P, W | 15.000 |
| t min, °C | -65 |
| t max, °C | 150 |
| Rth, °C/W | 8.330 |
| Vce sat. V | 1.00 |
| hfe min | 30 |
| hfe max | 240 |
| f, Hz | 10000000 |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | TO-252 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- STMicroelectronics (http://www.st.com)
- ON (http://www.onsemi.com)
- Diodes inc. (http://www.diodes.com)
- Others ()
- TY Semiconductor (http://www.twtysemi.com)
- Kexin (http://kexin.com.cn)
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
| | |
