| Транзистор | MJE350 |
| Тип | PNP |
| Vcb, V | 300 |
| Vce, V | 300.0 |
| Veb, V | 5.0 |
| Ic, A | 0.500 |
| Ic max, A | |
| P, W | 20.000 |
| t min, °C | -65 |
| t max, °C | 150 |
| Rth, °C/W | 6.000 |
| Vce sat. V | 0.50 |
| hfe min | 30 |
| hfe max | 240 |
| f, Hz | |
| R1, Ohm | |
| R2, Ohm | |
| Cobo, pF | |
| t on, ns | |
| t off, ns | |
| td, nS | |
| tr, nS | |
| ts, nS | |
| tf, nS | |
| Возможные корпуса | TO-225 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- STMicroelectronics (http://www.st.com)
- ON (http://www.onsemi.com)
- Boca semiconductor (http://www.bocasemi.com)
- Central Semiconductor (http://www.centralsemi.com)
- Multicomp ()
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
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