Диод PDF Тип V, V I, A Imax, A trr, nS C, pF f, Hz Vf, V P, W Ir, mkA t fr,nS t min,C t max,C Rth,C Eas,mJ dV/dt,nS Возможные корпуса
1N6619Silicon1000.03.000100.00070.0035.001.7001.000
1N662Silicon100.00.040500.003.001.0000.025-65150DO-204AA
1N6620Silicon200.01.20020.00030.001.6000.500-6517538.00
1N6620USSilicon200.01.20020.00030.0010.001.6000.500-6517513.00DO-213AB
1N6621Silicon400.01.20020.00030.001.6000.500-6517538.00
1N6621USSilicon400.01.20020.00030.0010.001.6000.500-6517513.00DO-213AB
1N6622Silicon600.01.20020.00030.001.6000.500-6517538.00
1N6622USSilicon600.01.20020.00030.0010.001.6000.500-6517513.00DO-213AB
1N6623Silicon800.01.00020.00050.001.8000.500-6517538.00
1N6623USSilicon800.01.00020.00050.0010.001.8000.500-6517513.00DO-213AB
1N6624Silicon900.01.00020.00050.001.8000.500-6517538.00
1N6624USSilicon900.01.00020.00050.0010.001.8000.500-6517513.00DO-213AB
1N6625Silicon1000.01.00015.00060.001.9501.000-6517538.00
1N6625USSilicon1000.01.00015.00060.0010.001.9501.000-6517513.00DO-213AB
1N6626Silicon200.02.30075.00030.001.5002.000-6517522.00
1N6626USSilicon200.02.30075.00030.0040.001.5002.000-651756.50DO-213AB
1N6627Silicon400.02.30075.00030.001.5002.000-6517522.00
1N6627USSilicon400.02.30075.00030.0040.001.5002.000-651756.50DO-213AB
1N6628Silicon600.02.30075.00030.001.5002.000-6517522.00
1N6628USSilicon600.02.30075.00030.0040.001.5002.000-651756.50DO-213AB