| Диод | B6S |
| Тип | Bridge |
| V, V | 600.0 |
| I, A | 0.500 |
| Imax, A | 30.000 |
| trr, nS | 2000.00 |
| C, pF | 25.00 |
| f, Hz | |
| Vf, V | 1.000 |
| P, W | |
| Ir, mkA | 5.000 |
| t fr,nS | |
| t min,C | -55 |
| t max,C | 150 |
| Rth,C | 85.00 |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | TO-269AA | | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- Atom-Tec (http://www.atom-tec.com)
- PANJIT (http://www.panjit.com)
- Bruckewell (http://bruckewell-semi.com)
- HY Electronic (http://www.hygroup.com.tw)
- Eris (http://www.eris.com.tw)
- ByteSonic (http://www.bytesonic.com)
- Diotech (KD) (http://www.kdiode.com)
- WTE (Won-Top Electronics) (http://www.wontop.com)
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