| Диод | 1N5407G |
| Тип | Silicon |
| V, V | 800.0 |
| I, A | 3.000 |
| Imax, A | 200.000 |
| trr, nS | 2000.00 |
| C, pF | 25.00 |
| f, Hz | |
| Vf, V | 1.000 |
| P, W | 6.250 |
| Ir, mkA | 5.000 |
| t fr,nS | |
| t min,C | -65 |
| t max,C | 150 |
| Rth,C | 25.00 |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | DO-201AD | | Производитель | - ON (http://www.onsemi.com)
- Diodes inc. (http://www.diodes.com)
- Taiwan semiconductor (http://www.ts.com.tw)
- HY Electronic (http://www.hygroup.com.tw)
- LGE (http://www.luguang.cn/web_en/)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- Eris (http://www.eris.com.tw)
- ByteSonic (http://www.bytesonic.com)
- First Semiconductor (http://www.first-semi.com)
- EIC (http://eicsemi.com)
| | |
