| Диод | 6A10 |
| Тип | Silicon |
| V, V | 100.0 |
| I, A | 6.000 |
| Imax, A | 250.000 |
| trr, nS | |
| C, pF | |
| f, Hz | |
| Vf, V | 0.950 |
| P, W | |
| Ir, mkA | 10.000 |
| t fr,nS | |
| t min,C | -65 |
| t max,C | 175 |
| Rth,C | |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | R-6 | | Производитель | - Diodes inc. (http://www.diodes.com)
- MCC (http://www.mccsemi.com)
- Taiwan semiconductor (http://www.ts.com.tw)
- Willas Electronic Corp. (http://www.willas.com.tw)
- GOOD-ARC (http://www.goodark.com)
- LGE (http://www.luguang.cn/web_en/)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- SangDest (http://www.smc-diodes.com)
- ByteSonic (http://www.bytesonic.com)
- Diotech (KD) (http://www.kdiode.com)
- FirstSilicon (http://www.firstsilicon.co.kr)
- TayChipST (http://taychipst.com)
- EIC (http://eicsemi.com)
| | |
