| Диод | ES2B |
| Тип | Silicon |
| V, V | 100.0 |
| I, A | 2.000 |
| Imax, A | 50.000 |
| trr, nS | 20.00 |
| C, pF | 25.00 |
| f, Hz | |
| Vf, V | 0.900 |
| P, W | |
| Ir, mkA | 5.000 |
| t fr,nS | |
| t min,C | |
| t max,C | |
| Rth,C | |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | DO-214AA,HSMA | | Производитель | - Diodes inc. (http://www.diodes.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
- MCC (http://www.mccsemi.com)
- Taiwan semiconductor (http://www.ts.com.tw)
- PANJIT (http://www.panjit.com)
- Bruckewell (http://bruckewell-semi.com)
- HY Electronic (http://www.hygroup.com.tw)
- LGE (http://www.luguang.cn/web_en/)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- ByteSonic (http://www.bytesonic.com)
- Diotech (KD) (http://www.kdiode.com)
- FirstSilicon (http://www.firstsilicon.co.kr)
- CITC (http://www.citcorp.com.tw)
- TayChipST (http://taychipst.com)
- EIC (http://eicsemi.com)
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