| Диод | DF10S |
| Тип | Bridge |
| V, V | 1000.0 |
| I, A | 1.000 |
| Imax, A | 50.000 |
| trr, nS | 25.00 |
| C, pF | 25.00 |
| f, Hz | |
| Vf, V | 1.100 |
| P, W | |
| Ir, mkA | 10.000 |
| t fr,nS | |
| t min,C | |
| t max,C | |
| Rth,C | |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | DFS,SDIP 4L | | Производитель | - Diodes inc. (http://www.diodes.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
- Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- TY Semiconductor (http://www.twtysemi.com)
- Bruckewell (http://bruckewell-semi.com)
- HY Electronic (http://www.hygroup.com.tw)
- LGE (http://www.luguang.cn/web_en/)
- Eris (http://www.eris.com.tw)
- Diotech (KD) (http://www.kdiode.com)
- FirstSilicon (http://www.firstsilicon.co.kr)
- WTE (Won-Top Electronics) (http://www.wontop.com)
- TayChipST (http://taychipst.com)
| | |
