| Диод | MB4S |
| Тип | Bridge |
| V, V | 400.0 |
| I, A | 0.800 |
| Imax, A | 40.000 |
| trr, nS | 2000.00 |
| C, pF | |
| f, Hz | |
| Vf, V | 1.100 |
| P, W | 1.670 |
| Ir, mkA | 5.000 |
| t fr,nS | |
| t min,C | |
| t max,C | |
| Rth,C | |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | SO 4L NB,MBS-1,MBS | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- MCC (http://www.mccsemi.com)
- Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- Bruckewell (http://bruckewell-semi.com)
- HY Electronic (http://www.hygroup.com.tw)
- LGE (http://www.luguang.cn/web_en/)
- CJ-Elec (http://www.cj-elec.com)
- Cystech Electronics Corp. (http://en.cystekec.com)
- FirstSilicon (http://www.firstsilicon.co.kr)
- CITC (http://www.citcorp.com.tw)
| | |
