| Диод | GBU4J |
| Тип | Bridge |
| V, V | 420.0 |
| I, A | 3.000 |
| Imax, A | 150.000 |
| trr, nS | |
| C, pF | 45.00 |
| f, Hz | |
| Vf, V | 1.000 |
| P, W | |
| Ir, mkA | 5.000 |
| t fr,nS | |
| t min,C | -55 |
| t max,C | 150 |
| Rth,C | 4.20 |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | GBU | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- MCC (http://www.mccsemi.com)
- Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- Bruckewell (http://bruckewell-semi.com)
- LGE (http://www.luguang.cn/web_en/)
- ByteSonic (http://www.bytesonic.com)
- Cystech Electronics Corp. (http://en.cystekec.com)
- WTE (Won-Top Electronics) (http://www.wontop.com)
- EIC (http://eicsemi.com)
| | |
