| Диод | 1F1 |
| Тип | Silicon |
| V, V | 50.0 |
| I, A | 1.000 |
| Imax, A | 25.000 |
| trr, nS | 150.00 |
| C, pF | 15.00 |
| f, Hz | |
| Vf, V | 1.300 |
| P, W | |
| Ir, mkA | 5.000 |
| t fr,nS | |
| t min,C | -65 |
| t max,C | 150 |
| Rth,C | 50.00 |
| Eas,mJ | |
| dV/dt,nS | |
| Возможные корпуса | R-1 | | Производитель | - MCC (http://www.mccsemi.com)
- MEI (http://www.megastar.com/)
- Willas Electronic Corp. (http://www.willas.com.tw)
- PANJIT (http://www.panjit.com)
- LGE (http://www.luguang.cn/web_en/)
- Galaxy Semiconductor Co. (http://www.galaxycn.com)
- SangDest (http://www.smc-diodes.com)
- Eris (http://www.eris.com.tw)
- ByteSonic (http://www.bytesonic.com)
- Diotech (KD) (http://www.kdiode.com)
- EIC (http://eicsemi.com)
| | |
