Справочник по IGBT транзисторам. Datasheet на транзистор STGB10NB60S


ТранзисторSTGB10NB60S
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A16.000
Ic max, A80.0
P, W80.000
t min,C-55
t max,C150
Rth,C1.56
Vce sat. V1.25
Cies,pF610.0
Coes,pF65.0
Cres,pF12.0
t on, nS700.00
t rise, nS460.00
t off, nS1200.00
t fall, nS1200.00
Eon,mJ0.600
Eoff,mJ5.000
Etot,mJ5.600
Qg, nC33.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-263
Производитель
  • STMicroelectronics (http://www.st.com)
STGB10NB60S Datasheet STMicroelectronics