Справочник по IGBT транзисторам. Datasheet на транзистор STGB30H60DF


ТранзисторSTGB30H60DF
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A60.000
Ic max, A120.0
P, W150.000
t min,C-55
t max,C150
Rth,C0.83
Vce sat. V1.90
Cies,pF4200.0
Coes,pF120.0
Cres,pF75.0
t on, nS
t rise, nS
t off, nS
t fall, nS
Eon,mJ
Eoff,mJ0.500
Etot,mJ
Qg, nC115.0
Qgc,nC
Qge,nC
t rr,nS150.0
Qrr, nC330.00
Возможные корпусаTO-263
Производитель
  • STMicroelectronics (http://www.st.com)
STGB30H60DF Datasheet STMicroelectronics