Справочник по IGBT транзисторам. Datasheet на транзистор STGD10NC60H


ТранзисторSTGD10NC60H
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A20.000
Ic max, A40.0
P, W60.000
t min,C-55
t max,C150
Rth,C2.08
Vce sat. V1.90
Cies,pF365.0
Coes,pF43.0
Cres,pF8.3
t on, nS14.20
t rise, nS5.00
t off, nS72.00
t fall, nS85.00
Eon,mJ31.800
Eoff,mJ95.000
Etot,mJ126.800
Qg, nC19.2
Qgc,nC7.0
Qge,nC4.5
t rr,nS
Qrr, nC
Возможные корпусаTO-252
Производитель
  • STMicroelectronics (http://www.st.com)
STGD10NC60H Datasheet STMicroelectronics