Справочник по IGBT транзисторам. Datasheet на транзистор STGD3NB60SD


ТранзисторSTGD3NB60SD
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A6.000
Ic max, A25.0
P, W48.000
t min,C-65
t max,C175
Rth,C175.00
Vce sat. V1.00
Cies,pF255.0
Coes,pF30.0
Cres,pF5.6
t on, nS125000.00
t rise, nS150000.00
t off, nS3400.00
t fall, nS1200.00
Eon,mJ1.100
Eoff,mJ1.150
Etot,mJ
Qg, nC18.0
Qgc,nC5.5
Qge,nC5.4
t rr,nS1700.0
Qrr, nC4500.00
Возможные корпусаTO-252
Производитель
  • STMicroelectronics (http://www.st.com)
STGD3NB60SD Datasheet STMicroelectronics