Справочник по IGBT транзисторам. Datasheet на транзистор STGE200NB60S


ТранзисторSTGE200NB60S
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A200.000
Ic max, A400.0
P, W600.000
t min,C-55
t max,C150
Rth,C0.21
Vce sat. V1.20
Cies,pF1560.0
Coes,pF1100.0
Cres,pF95.0
t on, nS64.00
t rise, nS112.00
t off, nS2400.00
t fall, nS1230.00
Eon,mJ11.700
Eoff,mJ59.000
Etot,mJ70.700
Qg, nC560.0
Qgc,nC170.0
Qge,nC70.0
t rr,nS
Qrr, nC
Возможные корпусаSOT-227
Производитель
  • STMicroelectronics (http://www.st.com)
STGE200NB60S Datasheet STMicroelectronics