Справочник по IGBT транзисторам. Datasheet на транзистор MYX100N170


ТранзисторMYX100N170
ТипSingle
Vce, V1700.0
Vge,V20.0
Ic, A100.000
Ic max, A200.0
P, W
t min,C-40
t max,C125
Rth,C
Vce sat. V2.20
Cies,pF30000.0
Coes,pF
Cres,pF
t on, nS250.00
t rise, nS250.00
t off, nS1150.00
t fall, nS100.00
Eon,mJ150.000
Eoff,mJ120.000
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC4500.0
t rr,nS
Qrr, nC
Возможные корпусаChip
Производитель
  • Micross (http://www.micross.com/)
MYX100N170 Datasheet Micross