Справочник по IGBT транзисторам. Datasheet на транзистор STGW35NB60SD


ТранзисторSTGW35NB60SD
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A70.000
Ic max, A250.0
P, W200.000
t min,C-55
t max,C150
Rth,C0.63
Vce sat. V1.25
Cies,pF1820.0
Coes,pF167.0
Cres,pF27.0
t on, nS92.00
t rise, nS70.00
t off, nS1100.00
t fall, nS790.00
Eon,mJ0.840
Eoff,mJ7.400
Etot,mJ8.240
Qg, nC83.0
Qgc,nC27.0
Qge,nC10.0
t rr,nS44.0
Qrr, nC66.00
Возможные корпусаTO-247
Производитель
  • STMicroelectronics (http://www.st.com)
STGW35NB60SD Datasheet STMicroelectronics