Справочник по IGBT транзисторам. Datasheet на транзистор MPMD100B120RH


ТранзисторMPMD100B120RH
ТипDual
Vce, V1200.0
Vge,V20.0
Ic, A150.000
Ic max, A200.0
P, W780.000
t min,C-55
t max,C150
Rth,C0.16
Vce sat. V2.70
Cies,pF4760.0
Coes,pF518.0
Cres,pF175.0
t on, nS135.00
t rise, nS60.00
t off, nS450.00
t fall, nS70.00
Eon,mJ6.700
Eoff,mJ6.000
Etot,mJ12.700
Qg, nC400.0
Qgc,nC236.0
Qge,nC44.0
t rr,nS100.0
Qrr, nC250.00
Возможные корпуса7DM-3
Производитель
  • Shaoguang (MagnaChip) (http://www.shaoguang.com.cn)
  • Dawin (http://www.dawinsemi.com)
  • MagnaChip (http://www.magnachip.com)
MPMD100B120RH Datasheet MagnaChip