Справочник по IGBT транзисторам. Datasheet на транзистор DM2G100SH6N


ТранзисторDM2G100SH6N
Тип-
Vce, V600.0
Vge,V
Ic, A100.000
Ic max, A
P, W
t min,C
t max,C
Rth,C
Vce sat. V2.10
Cies,pF
Coes,pF
Cres,pF
t on, nS
t rise, nS
t off, nS
t fall, nS110.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпуса7DM-1
Производитель
  • Dawin (http://www.dawinsemi.com)
DM2G100SH6N Datasheet Dawin