Справочник по IGBT транзисторам. Datasheet на транзистор F4-25R12NS4


ТранзисторF4-25R12NS4
ТипHalf bridge
Vce, V1200.0
Vge,V20.0
Ic, A25.000
Ic max, A50.0
P, W210.000
t min,C-40
t max,C150
Rth,C0.60
Vce sat. V3.20
Cies,pF1700.0
Coes,pF
Cres,pF110.0
t on, nS40.00
t rise, nS40.00
t off, nS280.00
t fall, nS20.00
Eon,mJ2.400
Eoff,mJ0.800
Etot,mJ
Qg, nC300.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC2200.00
Возможные корпусаEconoPack1
Производитель
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
F4-25R12NS4 Datasheet Others