Справочник по IGBT транзисторам. Datasheet на транзистор FP10R12W1T4


ТранзисторFP10R12W1T4
Тип3 phase bridge
Vce, V1200.0
Vge,V20.0
Ic, A10.000
Ic max, A20.0
P, W105.000
t min,C-40
t max,C150
Rth,C1.25
Vce sat. V1.85
Cies,pF600.0
Coes,pF
Cres,pF24.0
t on, nS45.00
t rise, nS44.00
t off, nS180.00
t fall, nS165.00
Eon,mJ0.900
Eoff,mJ0.550
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаEasyPIM
Производитель
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
  • Infineon (Siemens) (http://infineon.com)
FP10R12W1T4 Datasheet Infineon (Siemens)