Справочник по IGBT транзисторам. Datasheet на транзистор FP10R12NT3


ТранзисторFP10R12NT3
Тип3 phase bridge
Vce, V1200.0
Vge,V20.0
Ic, A10.000
Ic max, A20.0
P, W83.500
t min,C
t max,C
Rth,C1.50
Vce sat. V1.90
Cies,pF700.0
Coes,pF
Cres,pF26.0
t on, nS45.00
t rise, nS20.00
t off, nS290.00
t fall, nS90.00
Eon,mJ1.050
Eoff,mJ0.650
Etot,mJ
Qg, nC100.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC1050.00
Возможные корпусаEconoPIM1
Производитель
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
  • Infineon (Siemens) (http://infineon.com)
FP10R12NT3 Datasheet Infineon (Siemens)