Справочник по IGBT транзисторам. Datasheet на транзистор BSM100GAL120DLCK


ТранзисторBSM100GAL120DLCK
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A100.000
Ic max, A150.0
P, W300.000
t min,C-55
t max,C150
Rth,C0.16
Vce sat. V3.10
Cies,pF6500.0
Coes,pF1000.0
Cres,pF500.0
t on, nS130.00
t rise, nS80.00
t off, nS400.00
t fall, nS70.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC
t rr,nS300.0
Qrr, nC
Возможные корпуса
Производитель
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
BSM100GAL120DLCK Datasheet Others