Справочник по IGBT транзисторам. Datasheet на транзистор FP30R06W1E3_B11


ТранзисторFP30R06W1E3_B11
Тип3 phase bridge
Vce, V600.0
Vge,V20.0
Ic, A30.000
Ic max, A60.0
P, W115.000
t min,C-40
t max,C150
Rth,C1.15
Vce sat. V1.55
Cies,pF1650.0
Coes,pF
Cres,pF51.0
t on, nS20.00
t rise, nS16.00
t off, nS140.00
t fall, nS45.00
Eon,mJ0.500
Eoff,mJ0.600
Etot,mJ
Qg, nC0.3
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC1300.00
Возможные корпусаEasyPIM
Производитель
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
  • Infineon (Siemens) (http://infineon.com)
FP30R06W1E3_B11 Datasheet Infineon (Siemens)