Справочник по IGBT транзисторам. Datasheet на транзистор AP25G45GEM


ТранзисторAP25G45GEM
ТипSingle
Vce, V450.0
Vge,V6.0
Ic, A150.000
Ic max, A
P, W2.500
t min,C-55
t max,C150
Rth,C50.00
Vce sat. V6.00
Cies,pF2227.0
Coes,pF200.0
Cres,pF79.0
t on, nS11.50
t rise, nS24.50
t off, nS150.00
t fall, nS3300.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC64.5
Qgc,nC30.0
Qge,nC7.0
t rr,nS
Qrr, nC
Возможные корпусаSO-8
Производитель
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
AP25G45GEM Datasheet APEC(Advanced Power Electronics Corp.)