Справочник по IGBT транзисторам. Datasheet на транзистор AP28G45GEM


ТранзисторAP28G45GEM
ТипSingle
Vce, V450.0
Vge,V6.0
Ic, A130.000
Ic max, A
P, W2.500
t min,C-55
t max,C150
Rth,C50.00
Vce sat. V3.80
Cies,pF3020.0
Coes,pF220.0
Cres,pF50.0
t on, nS20.00
t rise, nS100.00
t off, nS400.00
t fall, nS3000.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC74.0
Qgc,nC34.0
Qge,nC8.0
t rr,nS
Qrr, nC
Возможные корпусаSO-8
Производитель
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
AP28G45GEM Datasheet APEC(Advanced Power Electronics Corp.)