Справочник по IGBT транзисторам. Datasheet на транзистор FGA20S125P


ТранзисторFGA20S125P
ТипSingle
Vce, V1250.0
Vge,V25.0
Ic, A40.000
Ic max, A60.0
P, W250.000
t min,C-55
t max,C175
Rth,C0.60
Vce sat. V2.00
Cies,pF1360.0
Coes,pF40.0
Cres,pF26.0
t on, nS10.00
t rise, nS260.00
t off, nS400.00
t fall, nS100.00
Eon,mJ0.740
Eoff,mJ0.500
Etot,mJ1.240
Qg, nC129.0
Qgc,nC9.0
Qge,nC66.0
t rr,nS
Qrr, nC
Возможные корпусаTO-3PN
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGA20S125P Datasheet FairChild (Samsung)