Справочник по IGBT транзисторам. Datasheet на транзистор TSG40N120CE


ТранзисторTSG40N120CE
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A64.000
Ic max, A120.0
P, W208.000
t min,C-55
t max,C150
Rth,C0.60
Vce sat. V2.00
Cies,pF5150.0
Coes,pF150.0
Cres,pF100.0
t on, nS41.00
t rise, nS82.00
t off, nS200.00
t fall, nS85.00
Eon,mJ5.800
Eoff,mJ1.500
Etot,mJ7.300
Qg, nC210.0
Qgc,nC115.0
Qge,nC50.0
t rr,nS220.0
Qrr, nC2600.00
Возможные корпусаTO-264
Производитель
  • Taiwan semiconductor (http://www.ts.com.tw)
TSG40N120CE Datasheet Taiwan semiconductor