Справочник по IGBT транзисторам. Datasheet на транзистор TSG25N120CN


ТранзисторTSG25N120CN
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A50.000
Ic max, A75.0
P, W312.000
t min,C-55
t max,C150
Rth,C0.40
Vce sat. V1.90
Cies,pF4000.0
Coes,pF105.0
Cres,pF72.0
t on, nS57.00
t rise, nS65.00
t off, nS240.00
t fall, nS86.00
Eon,mJ4.150
Eoff,mJ0.870
Etot,mJ5.020
Qg, nC170.0
Qgc,nC60.0
Qge,nC27.0
t rr,nS300.0
Qrr, nC4000.00
Возможные корпусаTO-3PN
Производитель
  • Taiwan semiconductor (http://www.ts.com.tw)
TSG25N120CN Datasheet Taiwan semiconductor