Справочник по IGBT транзисторам. Datasheet на транзистор TSG60N100CE


ТранзисторTSG60N100CE
ТипSingle
Vce, V1000.0
Vge,V20.0
Ic, A60.000
Ic max, A200.0
P, W208.000
t min,C-55
t max,C150
Rth,C0.60
Vce sat. V2.10
Cies,pF5600.0
Coes,pF150.0
Cres,pF115.0
t on, nS230.00
t rise, nS210.00
t off, nS1250.00
t fall, nS120.00
Eon,mJ14.500
Eoff,mJ7.000
Etot,mJ21.500
Qg, nC270.0
Qgc,nC100.0
Qge,nC45.0
t rr,nS310.0
Qrr, nC5270.00
Возможные корпусаTO-264
Производитель
  • Taiwan semiconductor (http://www.ts.com.tw)
TSG60N100CE Datasheet Taiwan semiconductor