Справочник по IGBT транзисторам. Datasheet на транзистор GB100XCP12-227


ТранзисторGB100XCP12-227
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A100.000
Ic max, A200.0
P, W
t min,C-40
t max,C175
Rth,C0.08
Vce sat. V1.90
Cies,pF8550.0
Coes,pF1390.0
Cres,pF250.0
t on, nS244.00
t rise, nS254.00
t off, nS488.00
t fall, nS153.00
Eon,mJ14.200
Eoff,mJ15.700
Etot,mJ
Qg, nC900.0
Qgc,nC
Qge,nC
t rr,nS100.0
Qrr, nC730.00
Возможные корпусаSOT-227
Производитель
  • GeneSiC (http://www.genesicsemi.com)
GB100XCP12-227 Datasheet GeneSiC