Справочник по IGBT транзисторам. Datasheet на транзистор NSGM100GB120


ТранзисторNSGM100GB120
ТипDual
Vce, V1200.0
Vge,V20.0
Ic, A100.000
Ic max, A200.0
P, W800.000
t min,C-40
t max,C125
Rth,C0.18
Vce sat. V1.80
Cies,pF10000.0
Coes,pF800.0
Cres,pF500.0
t on, nS250.00
t rise, nS350.00
t off, nS300.00
t fall, nS350.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC1050.0
Qgc,nC
Qge,nC
t rr,nS210.0
Qrr, nC930.00
Возможные корпуса
Производитель
  • Nell semiconductor (http://www.nellsemi.com)
NSGM100GB120 Datasheet Nell semiconductor