Справочник по IGBT транзисторам. Datasheet на транзистор NSGM150GB120B


ТранзисторNSGM150GB120B
ТипDual
Vce, V1200.0
Vge,V20.0
Ic, A150.000
Ic max, A300.0
P, W1250.000
t min,C-40
t max,C125
Rth,C0.18
Vce sat. V1.80
Cies,pF16000.0
Coes,pF1200.0
Cres,pF600.0
t on, nS160.00
t rise, nS65.00
t off, nS500.00
t fall, nS70.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC1560.0
Qgc,nC
Qge,nC
t rr,nS250.0
Qrr, nC5000.00
Возможные корпуса
Производитель
  • Nell semiconductor (http://www.nellsemi.com)
NSGM150GB120B Datasheet Nell semiconductor