Справочник по IGBT транзисторам. Datasheet на транзистор NSGM300GB120B


ТранзисторNSGM300GB120B
ТипDual
Vce, V1200.0
Vge,V20.0
Ic, A300.000
Ic max, A600.0
P, W2100.000
t min,C-40
t max,C125
Rth,C0.09
Vce sat. V2.00
Cies,pF30000.0
Coes,pF2000.0
Cres,pF1600.0
t on, nS220.00
t rise, nS60.00
t off, nS530.00
t fall, nS350.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC3060.0
Qgc,nC
Qge,nC
t rr,nS250.0
Qrr, nC12000.00
Возможные корпуса
Производитель
  • Nell semiconductor (http://www.nellsemi.com)
NSGM300GB120B Datasheet Nell semiconductor