Справочник по IGBT транзисторам. Datasheet на транзистор FGA60N65SMD


ТранзисторFGA60N65SMD
ТипSingle
Vce, V650.0
Vge,V20.0
Ic, A120.000
Ic max, A180.0
P, W600.000
t min,C-55
t max,C175
Rth,C0.25
Vce sat. V1.90
Cies,pF2915.0
Coes,pF270.0
Cres,pF85.0
t on, nS18.00
t rise, nS47.00
t off, nS104.00
t fall, nS50.00
Eon,mJ1.540
Eoff,mJ0.450
Etot,mJ1.990
Qg, nC189.0
Qgc,nC20.0
Qge,nC91.0
t rr,nS47.0
Qrr, nC87.00
Возможные корпусаTO-3PN
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGA60N65SMD Datasheet FairChild (Samsung)