Справочник по IGBT транзисторам. Datasheet на транзистор FGB7N60UNDF


ТранзисторFGB7N60UNDF
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A14.000
Ic max, A21.0
P, W83.000
t min,C-55
t max,C150
Rth,C1.50
Vce sat. V1.90
Cies,pF275.0
Coes,pF41.0
Cres,pF10.0
t on, nS5.90
t rise, nS4.20
t off, nS32.30
t fall, nS68.00
Eon,mJ0.099
Eoff,mJ0.104
Etot,mJ0.203
Qg, nC18.0
Qgc,nC13.0
Qge,nC3.0
t rr,nS32.3
Qrr, nC59.00
Возможные корпусаTO-263
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGB7N60UNDF Datasheet FairChild (Samsung)