Справочник по IGBT транзисторам. Datasheet на транзистор FGB40N60SM


ТранзисторFGB40N60SM
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A80.000
Ic max, A120.0
P, W349.000
t min,C-55
t max,C175
Rth,C0.43
Vce sat. V1.90
Cies,pF1880.0
Coes,pF180.0
Cres,pF50.0
t on, nS12.00
t rise, nS20.00
t off, nS92.00
t fall, nS13.00
Eon,mJ0.870
Eoff,mJ0.260
Etot,mJ1.130
Qg, nC119.0
Qgc,nC58.0
Qge,nC13.0
t rr,nS
Qrr, nC
Возможные корпусаTO-263
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGB40N60SM Datasheet FairChild (Samsung)