Справочник по IGBT транзисторам. Datasheet на транзистор FGA20S120M


ТранзисторFGA20S120M
ТипSingle
Vce, V1200.0
Vge,V25.0
Ic, A40.000
Ic max, A60.0
P, W348.000
t min,C-55
t max,C175
Rth,C0.43
Vce sat. V1.55
Cies,pF2680.0
Coes,pF53.0
Cres,pF43.0
t on, nS43.00
t rise, nS176.00
t off, nS310.00
t fall, nS320.00
Eon,mJ0.520
Eoff,mJ1.430
Etot,mJ1.950
Qg, nC208.0
Qgc,nC18.0
Qge,nC119.0
t rr,nS
Qrr, nC
Возможные корпусаTO-3PN
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGA20S120M Datasheet FairChild (Samsung)