Справочник по IGBT транзисторам. Datasheet на транзистор FGH50N3


ТранзисторFGH50N3
ТипSingle
Vce, V300.0
Vge,V20.0
Ic, A75.000
Ic max, A240.0
P, W463.000
t min,C-55
t max,C150
Rth,C0.27
Vce sat. V1.30
Cies,pF
Coes,pF
Cres,pF
t on, nS20.00
t rise, nS15.00
t off, nS135.00
t fall, nS12.00
Eon,mJ0.130
Eoff,mJ0.092
Etot,mJ
Qg, nC180.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGH50N3 Datasheet FairChild (Samsung)